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RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
RS2001M THRU RS2007M
SINGLE-PHASE SILICON BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 20 Amperes
FEATURES
* * * * * * Low leakage Low forward voltage Mounting position: Any Surge overload rating: 300 amperes peak Ideal for printed cikcuit boakds High forward surge current capability
RS-20M
.189 (4.8) 1.193 (30.3) 1.169 (29.7)
.197 (5)
MECHANICAL DATA
* UL listed the recognized component directory, file #E94233 * Epoxy: Device has UL flammability classification 94V-O
.150 (3.8) .134 (3.4)
.800 (20.3) .697 (17.7) .441 (11.2) .425 (10.8)
.173 (4.4)
.165 (4.2) .150 (3.8) .708 (18.0) .669 (17.0)
.106 (2.7) .096 (2.3) .094 (2.4) .078 (2.0)
.114 (2.9) .098 (2.5)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
.043 (1.1) .035 (0.9) .402 (10.2) .386 (9.8) .303 (7.7) .287 (7.3) .303 (7.7) .287 (7.3)
.031 (0.8) .023 (0.6)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At TA = 25 oC unless otherwise noted) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Bridge Input Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Output Current at Tc = 100o C with heatsink Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load Operating and Storage Temperature Range TJ,TSTG -55 to + 150
0
SYMBOL VRRM VRMS VDC IO IFSM
RS2001M RS2002M RS2003M RS2004M RS2005M RS2006M RS2007M UNITS 50 35 50 100 70 100 200 140 200 400 280 400 20 300 600 420 600 800 560 800 1000 700 1000 Volts Volts Volts Amps Amps C
ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Forward Voltage Drop per element at 10A DC Maximum Reverse Current at Rated DC Blocking Voltage per element @TA = 25 oC @TC = 100 oC SYMBOL VF IR 0.2 mAmps 2001-5 RS2001M RS2002M RS2003M RS2004M RS2005M RS2006M RS2007M UNITS 1.1 10 Volts uAmps
f.134 (3.1) .122 (3.1)
RATING AND CHARACTERISTIC CURVES (RS2001M THRU RS2007M)
TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT, (A)
POWER DISSIPATION 60
sine wave Tj=150
30 20 10 5 2 1 0.5 0.2 0.1 0.2 0.4 0.6 0.8 1
pulse test per one diode TC = 150 (TYP)
POWER DISSIPATION PF(W)
50
40
TC = 25 (TYP)
30 20
10 0 1.2 1.4 1.6
0
4
8
12
16
20
24
INSTANTANEOUS FORWARD VOLTAGE, (V) SURGE FORWARD CURRENT CAPABILITY
PEAK FORWARD SURGE CURRENT, (A)
AVERAGE RECTIFIED FORWARD CURRENT, Io (A)
TYPICAL FORWARD CURRENT DERATING CURVE 4
AVERAGE FORWARD CURRENT, (A)
on glass-epoxi substrate
300
sine wave 0
IFSM
8.3ms 8.3ms
3
250
1 cycle non-repetitive Tj=25
P.C.B
soldering land 5mmf sine wave R-load free in air
2
200
1
150 1
2
5
10
20
50
100
0 0
40
80
120 )
160
NUMBER OF CYCLE TYPICAL FORWARD CURRENT DERATING CURVE 22
AVERAGE FORWARD CURRENT, (A)
AMBIENT TEMPERATURE, (
CONTACT THERMAL RESISTANCE fcf 1
with thermal compound
heatsink Tc Tc
/W)
20
0.9
18
sine wave R-load on heatsink
THERMAL RESISTANCE (
0.8
0.7
16
0.6
14
0.5 0.4
12 80
90
100 110 120 130 140 CASE TEMPERATURE, ( )
150 160
2
3
4
5
6
7
8
MOUNTING TORQUE (Kg.cm)
RECTRON

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